Influence of structural variation of Ni silicide thin films on electrical property for contact materials

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1896-1900

  Okubo, Kazuya ^a   Tsuchiya, Yoshinori ^a,b   Nakatsuka, Osamu ^a   Sakai, Akira ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Contact; Epitaxial growth; Nickel; Silicide; Thin film

Indexed keywords

AGGLOMERATION; ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTALLOGRAPHY; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; MOSFET DEVICES; NICKEL; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS;

ANNEALING TEMPERATURE; CONTACT RESISTIVITY; SHEET RESISTANCE; SILICIDE;

THIN FILMS;

EID: 3142573084     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1896     Document Type: Conference Paper

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