Epitaxial growth of NiSi2 induced by sulfur segregation at the NiSi2/Si (100) interface

Journal of Materials Research

Volumn 24, Issue 1, 2009, Pages 135-139

  Zhao, Q T ^a   Mi, S B ^a   Jia, C L ^a   Urban, C ^a   Sandow, C ^a   Habicht, S ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; NICKEL; PHASE INTERFACES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; SULFUR;

ATOM DISTRIBUTIONS; DEPTH PROFILES; HIGH DOSE; HIGH QUALITIES; LOW TEMPERATURES; NICKEL SILICIDES; SI(1 0 0 ); SILICIDATION; SULFUR SEGREGATIONS;

EPITAXIAL GROWTH;

EID: 61749100093     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0006     Document Type: Article

References (11)

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