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Volumn 98, Issue 18, 2011, Pages

Improved diamond surfaces following lift-off and plasma treatments as observed by x-ray absorption spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; CORE LEVELS; CRYSTALLINE DAMAGE; CRYSTALLINE INTERFACES; DIAMOND CRYSTALS; DIAMOND DEVICES; DIAMOND SURFACES; HYDROGEN PLASMA TREATMENTS; ION-INDUCED DAMAGE; NEAR EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTROSCOPIES; PLASMA TREATMENT; PRISTINE DIAMOND; RESIDUAL DAMAGE; UNOCCUPIED STATE;

EID: 79957439628     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3585106     Document Type: Article
Times cited : (13)

References (22)
  • 1
    • 21444431644 scopus 로고    scopus 로고
    • Diamond semiconductor technology for RF device applications
    • DOI 10.1016/j.sse.2005.04.005, PII S0038110105001139
    • Y. Gurbuz, O. Esame, I. Tekin, W. P. Kang, and J. L. Davidson, Solid-State Electron. 0038-1101 49, 1055 (2005). 10.1016/j.sse.2005.04.005 (Pubitemid 40915093)
    • (2005) Solid-State Electronics , vol.49 , Issue.7 , pp. 1055-1070
    • Gurbuz, Y.1    Esame, O.2    Tekin, I.3    Kang, W.P.4    Davidson, J.L.5
  • 2
    • 77954875299 scopus 로고    scopus 로고
    • 0556-2805, 10.1103/PhysRevB.81.085314
    • M. T. Edmonds, C. I. Pakes, and L. Ley, Phys. Rev. B 0556-2805 81, 085314 (2010). 10.1103/PhysRevB.81.085314
    • (2010) Phys. Rev. B , vol.81 , pp. 085314
    • Edmonds, M.T.1    Pakes, C.I.2    Ley, L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.