메뉴 건너뛰기




Volumn 24, Issue 2, 2011, Pages 200-203

The study on the morphology control of silicon etching by ICP

Author keywords

Bowing effect; Icp etching; Morphology control; Silicon; Technique parameter

Indexed keywords


EID: 79956335500     PISSN: 10041699     EISSN: None     Source Type: Journal    
DOI: 10.3969/j.issn.1004-1699.2011.02.009     Document Type: Article
Times cited : (6)

References (20)
  • 1
    • 79956323406 scopus 로고    scopus 로고
    • Chinese source
  • 2
    • 0035880212 scopus 로고    scopus 로고
    • Anisotropic silicon trenches 300 -500 μm deep employing TMDE[J]
    • Ayon A A, Zhang X, Khanna R. Anisotropic Silicon Trenches 300 -500 μm Deep Employing TMDE[J]. Sensors and Actuators A :Physical 2001, 91 (3) :381-385.
    • (2001) Sensors and Actuators A:Physical , vol.91 , Issue.3 , pp. 381-385
    • Ayon, A.A.1    Zhang, X.2    Khanna, R.3
  • 3
    • 79956307808 scopus 로고    scopus 로고
    • Chinese source
  • 5
    • 36549100931 scopus 로고
    • Low temperature reactive ion etching and microwave plasma etching of silicon[J]
    • Tachi K, Tsujimoto S, Okudaira. Low Temperature Reactive Ion Etching and Microwave Plasma Etching of Silicon[J]. Appl Phys, 1988, (52) :616-618.
    • (1988) Appl Phys , Issue.52 , pp. 616-618
    • Tachi, K.1    Okudaira, T.S.2
  • 7
    • 0035876169 scopus 로고    scopus 로고
    • Dry etching-based silicon micro-machining for MEMS[J]
    • Ivo W Rangelow. Dry Etching-Based Silicon Micro-Machining for MEMS[J]. Vacuum, 2001,62:279-291.
    • (2001) Vacuum , vol.62 , pp. 279-291
    • Rangelow, I.W.1
  • 9
    • 38949172099 scopus 로고    scopus 로고
    • Isotropic etch for SiO2 microcantilever release with ICP system[J]
    • Chen Q, Fang J, Ji K H. Isotropic Etch for SiO2 Microcantilever Release with ICP System[J]. EEE Sens,2007(1632) :500-507.
    • (2007) EEE Sens , Issue.1632 , pp. 500-507
    • Chen, Q.1    Fang, J.2    Ji, K.H.3
  • 10
    • 17444372774 scopus 로고    scopus 로고
    • Investigations of the isotropic etch of an ICP source for silicon microlens mold fabrication[J]
    • Larsen K P, Ravnkilde J, Hansen O. Investigations of the Isotropic Etch of an ICP Source for Silicon Microlens Mold Fabrication[J]. Micromech Microeng, 2005(15) :873-875.
    • (2005) Micromech Microeng , Issue.15 , pp. 873-875
    • Larsen, K.P.1    Ravnkilde, J.2    Hansen, O.3
  • 11
    • 65449158324 scopus 로고    scopus 로고
    • Fabrication of high-speed polyimide-based humidity sensor using anisotropic and isotropic etching with ICP[J]
    • Jae Sung Kim, Myung Jin Lee, Moon-Sik Kang, et al. Fabrication of High-Speed Polyimide-Based Humidity Sensor Using Anisotropic and Isotropic Etching with ICP[J]. Thin Solid Films,2009(517) : 3879-3882.
    • (2009) Thin Solid Films , Issue.517 , pp. 3879-3882
    • Kim, J.S.1    Lee, M.J.2    Kang, M.-S.3
  • 12
    • 42949159869 scopus 로고    scopus 로고
    • ICP etching of polycrystalline diamonds: Fabrication of diamond nano-tips for AFM cantilevers
    • DOI 10.1016/j.diamond.2007.12.071, PII S0925963508000447
    • Uetsuka H, Yamada T, Shikata S. ICP Etching of Polycrystalline Diamonds : Fabrication of Diamond Nano-Tips for AKM Cantilevers [J]. Diamond & Related Materials, 2008(17) :728-731. (Pubitemid 351608843)
    • (2008) Diamond and Related Materials , vol.17 , Issue.4-5 , pp. 728-731
    • Uetsuka, H.1    Yamada, T.2    Shikata, S.3
  • 13
    • 79956305665 scopus 로고    scopus 로고
    • Chinese source
  • 14
    • 79956300847 scopus 로고    scopus 로고
    • Chinese source
  • 15
    • 79956298321 scopus 로고    scopus 로고
    • Chinese source
  • 17
    • 0346651219 scopus 로고
    • Charging of pattern features during plasma etching[J]
    • Arnold J C, Sawin H h J. Charging of Pattern Features During Plasma Etching[J]. Appl Phys, 1991, 70(10) :15.
    • (1991) Appl Phys , vol.70 , Issue.10 , pp. 15
    • Arnold, J.C.1    Swain, H.H.J.2
  • 18
    • 0000302625 scopus 로고
    • The influence of substrate topography on ion bombardment in plasma etching[J]
    • Ingram S G. The Influence of Substrate Topography on Ion Bombardment in Plasma Etching[J]. Appl Phys, 1990, 68(2).
    • (1990) Appl Phys , vol.68 , Issue.2
    • Ingram, S.G.1
  • 20
    • 0034227584 scopus 로고    scopus 로고
    • Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas[J]
    • Lee J W, Devre M W, Reelfs B H, et al. Advanced Selective Dry Etching of GaAs/AlGaAs in High Density Inductively Coupled Plasmas[J]. Vac Sci Technol, 2000, 18(4) :1220-1224.
    • (2000) Vac Sci Technol , vol.18 , Issue.4 , pp. 1220-1224
    • Lee, J.W.1    Devre, M.W.2    Reelfs, B.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.