Amorphous In-Ga-Zn-Oxide TFTs with high stability against bias temperature stress

IDW'10 - Proceedings of the 17th International Display Workshops

Volumn 3, Issue , 2010, Pages 1855-1858

  Saito, Nobuyoshi ^a   Ueda, Tomomasa ^a   Nakano, Shintaro ^a   Hara, Yujiro ^a   Miura, Kentaro ^a   Yamaguchi, Hajime ^a   Amemiya, Isao ^a   Ishida, Arichika ^b   Matsuura, Yuki ^b   Sasaki, Atsushi ^b   Tonotani, Junichi ^a   Ikagawa, Masakuni ^a  

^a TOSHIBA CORPORATION   (Japan)

^b Japan Display Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE STRESS; ETCHING STOPPER; GATE INSULATOR; HIGH STABILITY; HYDROGEN CONCENTRATION; INTERMEDIATE ANNEALINGS; LUMINANCE UNIFORMITY; REACTION-DIFFUSION MODELS;

AMORPHOUS FILMS; GALLIUM; HYDROGEN; ORGANIC LIGHT EMITTING DIODES (OLED); ZINC;

THIN FILM TRANSISTORS;

EID: 79956307338     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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