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Volumn 45, Issue 9 A, 2006, Pages 6927-6929

Light-output enhancement of GaN-based light-emitting diodes by photoelectrochemical oxidation in H2O

Author keywords

Gallium nitride (GaN); H2O; Light emitting diode (LED); Light output enhancement; Photoelectrochemical (PEC) oxidation

Indexed keywords

ANTIREFLECTION COATINGS; ATOMIC FORCE MICROSCOPY; LIGHT EMISSION; OXIDATION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE;

DYNAMIC RESISTANCE; LIGHT-OUTPUT ENHANCEMENT; PHOTOELECTROCHEMICAL (PEC) OXIDATION;

LIGHT EMITTING DIODES;

EID: 33748990864 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.6927 Document Type: Article

Times cited : (9)

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