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Journal of Laser Micro Nanoengineering

Volumn 4, Issue 3, 2009, Pages 197-201

Epitaxial growth of LaB6 thin films on ultrasmooth sapphire substrate with epitaxial SrB6 buffer layer

(6) Kato, Yushi a Shiraishi, Naoki a Kaneko, Satoru b Tsuchimine, Nobuo c Kobayashi, Susumu c Yoshimoto, Mamoru a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY (Japan)

c TOSHIMA Manufacturing Co Ltd (Japan)

Author keywords

Electrical properties; Epitaxial thin film; Hexaboride; LaB6; Laser MBE; SrB6

Indexed keywords

BUFFER LAYERS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; LABORATORIES; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING FILMS; SINGLE CRYSTALS; X RAY DIFFRACTION;

EPITAXIAL THIN FILMS; HEXABORIDES; LAB6; LASER MBE; SRB6;

THIN FILMS;

EID: 79956115789 PISSN: None EISSN: 18800688 Source Type: Journal
DOI: 10.2961/jlmn.2009.03.0010 Document Type: Article

Times cited : (4)

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