Breaking the isotropy of porous silicon formation by means of current focusing

Sensors and Actuators, A: Physical

Volumn 74, Issue 1, 1999, Pages 113-117

  Zeitschel, A ^a   Friedberger, A ^a   Welser, W ^a   Muller G ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; CRYSTAL MICROSTRUCTURE; ELECTRIC CURRENTS; ETCHING; ION IMPLANTATION; MICROMACHINING; SILICON WAFERS;

ELECTRICAL CURRENT FOCUSING TECHNIQUES; ISOTROPY; SILICON HOTPLATES; STRESS FREE BULK CRYSTALLINE SILICON;

POROUS SILICON;

EID: 0032665975     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00339-2     Document Type: Article

References (13)

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