Stress measurement technique to monitor porous silicon processing

Journal of Porous Materials

Volumn 7, Issue 1, 2000, Pages 319-321

  Francia, G D I ^a   Ferrara, V L A ^a   Lancellotti, L ^a   Quercia, L ^a  

^a ENEA CR Portici   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ANODIC OXIDATION; CRYSTAL ORIENTATION; DESORPTION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; HYDROGEN; POROSITY; SILICON WAFERS; STRESS ANALYSIS; THERMAL EFFECTS;

ELECTROCHEMICAL ANODIZATION; STRESS MEASUREMENT;

POROUS SILICON;

EID: 0033892338     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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