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Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 634-637

Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells

(9) Ryu, Mee Yi a Yu, Phil Won a Shin, Eun Joo b Lee, Joo In b Yu, Sung Kyu b Oh, Eunsoon c Nam, Ok Hyun c Sone, Chul Soo c Park, Yong Jo c

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

c Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000132509 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1331077 Document Type: Article

Times cited : (20)

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