Si-SiO2 barrier height and its temperature dependence in metal-oxide-semiconductor structures with ultrathin gate oxide

Applied Physics Letters

Volumn 80, Issue 18, 2002, Pages 3334-3336

  Hadjadj, A ^a   Simonetti, O ^a   Maurel, T ^a   Salace, G ^a   Petit, C ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT-VOLTAGE MEASUREMENTS; FOWLER-NORDHEIM; METAL OXIDE SEMICONDUCTOR STRUCTURES; OXIDE LAYER; OXIDE THICKNESS; POLY-SI GATES; POTENTIAL DISTRIBUTIONS; SELF-CONSISTENT MODEL; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TEMPERATURE SENSITIVITY; ULTRA THIN GATE OXIDE;

MOS DEVICES; SILICON COMPOUNDS; SILICON OXIDES; VOLTAGE MEASUREMENT;

SILICON;

EID: 79956028735     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476709     Document Type: Article

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