Unified model for QBD prediction for thin gate oxide MOS devices with constant voltage and current stress

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 357-372

  Quddus, Mohammed T ^a   Demassa, Thomas A ^a   Sanchez, Julian J ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; GATES (TRANSISTOR); MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTING SILICON;

ANODE HOLE INJECTION; CURRENT STRESS; DIELECTRIC BREAKDOWN; POLYDEPLETION EFFECT; THIN GATE OXIDES; TUNNELING CURRENT;

MOS DEVICES;

EID: 0033726122     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00508-0     Document Type: Article

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