Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4696-4698

  Gopal, A V ^a   Yoshida, H ^a   Simoyama, T ^a   Georgiev, N ^a   Mozume, T ^a   Ishikawa, H ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; COMMUNICATION WAVELENGTHS; INGAAS/ALASSB; INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITIONS; MULTIQUANTUM WELLS; PHOTOLUMINESCENCE SPECTRUM; ROOM TEMPERATURE; SHORT WAVELENGTHS; WELL REGION;

MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

WELLS;

EID: 79956022256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489479     Document Type: Article

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