Low-temperature crystallization of sol-gel derived Pb(Zr0.4,Ti0.6)O3 thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 B, 2001, Pages 5533-5538

  Maki, Kazunari ^a   Soyama, Nobuyuki ^a   Nagamine, Kaoru ^a   Mori, Satoru ^a   Ogi, Katsumi ^a  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

Crystallization; CSD; Diol; Ferroelectric; Film; Low temperature; Propylene glycol; PZT; Sol gel

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; FERROELECTRICITY; FILM PREPARATION; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; PERMITTIVITY; REMANENCE; SEMICONDUCTING LEAD COMPOUNDS; SOL-GELS; SUBSTRATES;

DIOL BASED SOLUTIONS;

THIN FILMS;

EID: 0035455196     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5533     Document Type: Article

References (12)