Wafer bonding of gallium arsenide on sapphire

Applied Physics A: Materials Science and Processing

Volumn 64, Issue 6, 1997, Pages 533-537

  Kopperschmidt, P ^a   Kastner G ^a   Senz, St ^a   Hesse, D ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BUBBLES (IN FLUIDS); CHEMICAL BONDS; HEATING; INTERFACES (MATERIALS); NITROGEN; QUENCHING; SAPPHIRE; SURFACE PHENOMENA; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

FRACTURE ENERGY; HYDROPHOBIC BONDING; MACROSCOPIC INTERFACE BUBBLES; WAFER BONDING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031166666     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050512     Document Type: Article

References (17)

1. H. Baumgart, C. Hunt, M. Schmidt, T. Abe (eds.): Proc. 2rd Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications II (Electrochem. Soc., Pennington, NJ 1993)
2. C. Hunt, H. Baumgart, S. Iyer, U. Gösele, T. Abe (eds.): Proc. 3rd Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications (Electrochem. Soc. , Pennington, NJ 1995)
3. S. Bengtsson: J. Electronic Materials 21, 669 (1992)
4. Special Issue on Direct Bonding, Philips J. Res. 49 (1995)
5. U. Gösele, H. Stenzel, M. Reiche, T. Martini, H. Steinkirchner, Q.-Y. Tong: Solid State Phenomena 47/48, 33 (1996)
6. E. Yablonovilch, D.M. Hwang, T.J. Gmitter, L.T. Florez, J.P. Harbison: Appl. Phys. Lett. 56, 2419 (1990)
7. J. Haisma, G.A.C.M. Spierings, U.K.P. Biermann, A.A. van Gorkum: Appl. Opt. 33, 1154 (1994)
8. T. Takamori, H. Wada, T. Kamijoh: Appl. Surf. Sci. in press
9. T. Sugino, T. Itagaki, J. Shirafuji: Diamond and Related Materials 5, 714 (1996)
10. L. Di Cioccio, Y. Le Tiec, F. Letertre, C. Jaussaud, M. Bruel: Electron. Lett. Vol. 32, 1144 (1996)
11. Z.-Y. Shen: In High-Temperature Superconducting Microwave Circuits, (Artech House, Inc., London 1994), p. 193
12. J.M. Phillips: J. Appl. Phys. 79, 1829 (1996)
13. T. Stengl, K.-Y. Ahn, U. Gösele: Jpn. J. Appl. Phys. 27, 2364 (1988)
14. W.P. Maszara, G. Goertz, A. Cavilia, J.B. McKnitterick: J. Appl. Phys. 64, 4943 (1988)
15. K. Mitani, V. Lehmann, R. Stengl, D. Feijoo, U.M. Gösele, H.Z. Massoud: Jpn. J. Appl. Phys. 30, 615 (1991)
16. P. Kopperschmidt, St. Senz, G. Kästner, D. Hesse, U.M. Gösele: Proc. 23th Int. Conf Phys. Semiconductors (ICPS), Berlin (1996), ed. by M. Scheffler and R. Zimmermann, (World Scientific, Singapore 1996), p.967
17. H.L. Hartnagel: In Properties of Gallium Arsenide, 2nd ed. (INSPEC, London 1990), p.369