Effect of n-type modulation doping on the photoluminescence of GaN/Al 0.07Ga0.93N multiple quantum wells

Applied Physics Letters

Volumn 80, Issue 8, 2002, Pages 1373-1375

  Haratizadeh, H ^a   Paskov, P P ^a   Pozina, G ^a   Holtz, P O ^a   Monemar, B ^a   Kamiyama, S ^b   Iwaya, M ^b   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY TIME; DOPING LEVELS; EXCITON LOCALIZATION; MODULATION DOPING; MODULATION-DOPED; MULTIPLE-QUANTUM-WELL STRUCTURES; NON-RADIATIVE LIFETIMES; ROOM TEMPERATURE; SI-DOPING; TEMPERATURE DEPENDENCE; TIME-RESOLVED PL MEASUREMENT;

GALLIUM; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956004960     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448144     Document Type: Article

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