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Volumn 189-190, Issue , 1998, Pages 606-610

Emission mechanism of localized excitons in InxGa1 - xN single quantum wells

Author keywords

InGaN; Quantum dot; Single quantum well; Time resolved photoluminescence

Indexed keywords

CRYSTAL MICROSTRUCTURE; EMISSION SPECTROSCOPY; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

ELECTROREFLECTANCE SPECTROSCOPY; PHOTO INDUCED VOLTAGE SPECTROSCOPY; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032094195 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00209-7 Document Type: Article

Times cited : (15)

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