Defect physics investigations using positron and ion beams

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 56-60

  Simpson, P J ^a   Szpala, Stanislaw ^a   Knights, A P ^b,c  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c Bookham Technology Ltd   (United Kingdom)

Author keywords

Electric fields; Garboldisham; Ion implantation; Silicon; Vacancies

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ION BEAMS; ION IMPLANTATION; IRRADIATION; POSITRONS; SEMICONDUCTING SILICON;

DAMAGE CASCADES; DEFECT ACCUMULATION; DEFECT CONCENTRATIONS; DEFECT PHYSICS; POSITRON BEAMS; VACANCY FORMATION ENERGY;

SOLID STATE PHYSICS;

EID: 0035008109     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.363-365.56     Document Type: Conference Paper

References (13)

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8. There appears to be a growing concensus in the field that Sd for the divacancy is about 1.045±0.005, despite some experimental results to the contrary.
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