Room-temperature electroluminescence from Si/Ge/Si1-xGex quantum-well diodes grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 69, Issue 16, 1996, Pages 2376-2378

  Presting, H ^a   Zinke, T ^b   Splett, A ^b   Kibbel, H ^a   Jaros, M ^c  

^a DAIMLER AG   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001523331     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117642     Document Type: Article

References (21)

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