Zero-field spin splitting in In0.52Al0.48As/In xGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3132-3134

  Cui, L J ^a   Zeng, Y P ^a   Wang, B Q ^a   Zhu, Z P ^a   Lin, L Y ^a   Jiang, C P ^b   Guo, S L ^b   Chu, J H ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; EXCITED ELECTRONS; GAAS; GAAS SUBSTRATES; INDIUM CONTENT; SHUBNIKOV-DE HAAS MEASUREMENTS; SPIN SPLITTINGS; SPIN-POLARIZED; SUB-BANDS; ZERO FIELDS; ZERO-FIELD SPIN SPLITTING;

ALUMINUM; ELECTRONS; GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955985216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476055     Document Type: Article

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