Effect of the heterointerface on the spin splitting in modulation doped InxGa1-xAs/InP quantum wells for B→0

Journal of Applied Physics

Volumn 83, Issue 8, 1998, Pages 4324-4333

  Schapers Th ^a   Engels, G ^a   Lange, J ^a   Klocke, Th ^a   Hollfelder, M ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007087108     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367192     Document Type: Article

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