High hole mobility (1300cm2/Vs) at room temperature in hydrogen-terminated (001) diamond

Applied Physics Letters

Volumn 80, Issue 21, 2002, Pages 3961-3963

  Kasu, Makoto ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HOMOEPITAXIAL DIAMOND; HOMOEPITAXIAL LAYERS; NEAR ROOM TEMPERATURE; PARALLEL CONDUCTION; ROOM TEMPERATURE; SHEET DENSITY;

HYDROGEN;

HOLE MOBILITY;

EID: 79955984941     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481535     Document Type: Article

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