X-ray diffraction study of gallium nitride grown by MOCVD

Physica Status Solidi (B) Basic Research

Volumn 193, Issue 2, 1996, Pages 391-397

  Metzger, Th ^a   Angerer, H ^b   Ambacher, O ^b   Stutzmann, M ^b   Born, E ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030532349     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.2221930213     Document Type: Article

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