193 nm resist chemical modification induced by HBr cure plasma treatment: A TD-GC/MS outgassing study

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7972, Issue , 2011, Pages

  Tiron, Raluca ^a   Pargon, Erwine ^b   Azarnouche, Laurent ^b   Fontaine, Herve ^a   Cetre, Sylviane ^a   Sourd, Claire ^a  

^a CEA GRENOBLE   (France)

^b CNRS   (France)

Author keywords

193nm chemically amplified resists; Deprotection; HBr cure plasma treatment; Outgassing; Td GCMS

Indexed keywords

CHEMICALLY AMPLIFIED RESIST; DEPROTECTION; HBR CURE PLASMA TREATMENT; OUTGASSING; TD- GCMS;

CHEMICAL MODIFICATION; CURING; DEGASSING; GRAVIMETRIC ANALYSIS; PLASMA APPLICATIONS; QUALITY CONTROL; SURFACE CHEMISTRY; THERMAL DESORPTION; THERMOANALYSIS;

PLASMAS;

EID: 79955896321     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879390     Document Type: Conference Paper

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