Resist and BARC organic outgassing measured by TD-GCMS: Investigation during the exposure or the bake steps of the lithographic process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6533, Issue , 2007, Pages

  Tiron, Raluca ^a   Sourd, Claire ^a   Fontaine, Hervé ^a   Cetre, Sylviane ^a   Mortini, Bénédicte ^b  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; GAS CHROMATOGRAPHY; LITHOGRAPHY; MASS SPECTROMETRY; THERMAL DESORPTION; THERMOGRAVIMETRIC ANALYSIS;

BAKE CONDITIONS; DEFECTIVITY MONITORING; ORGANIC OUTGASSING;

PHOTORESISTS;

EID: 35648993931     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.736532     Document Type: Conference Paper

References (5)

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3. C Boulanger et al. Proc. SPIE 6152 (2005)
4. M. Veillerot et al., Materials science and engineering, B102 (2003) 385
5. ASTM F-1982, Standard test methods for analysing organic contaminants on silicon wafer surfaces by Thermal Desorbtion Gas Chromatography, ASTM, USA, 1999.