Fabrication and characterization of networked graphene devices based on ultralarge single-layer graphene sheets

IEEE Transactions on Nanotechnology

Volumn 10, Issue 3, 2011, Pages 467-471

  Dong, Xiaochen ^a   Huang, Wei ^a   Chen, Peng ^b  

^a NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b Nanyang Technological University   (Singapore)

Author keywords

FET; graphene oxide (GO); single layer graphene (SLG)

Indexed keywords

AQUEOUS MEDIA; ELECTRICAL CHARACTERIZATION; FET; GRAPHENE DEVICES; GRAPHENE SHEETS; GRAPHENE TRANSISTORS; HIGH MOBILITY; REDUCTION PROCESS; SINGLE LAYER; THERMAL ANNEALING PROCESS; X-RAY PHOTOELECTRONS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; HOLE MOBILITY; MESFET DEVICES; PHOTOELECTRON SPECTROSCOPY; RAMAN SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAPHENE;

EID: 79955888959     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2047263     Document Type: Article

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