A 130-nm 0.9-V 66-MHz 8-Mb (256K × 32) local SONOS Embedded Flash EEPROM

IEEE Journal of Solid-State Circuits

Volumn 40, Issue 4, 2005, Pages 877-882

  Seo, Myoung Kyu ^a   Sim, Soung Hoon ^a   Oh, Myoung Hee ^a   Lee, Hyo Sang ^a   Kim, Sang Won ^a   Cho, In Wook ^a   Kim, Gyu Hong ^a   Kim, Moon Gone ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

EEPROM; Embedded flash memory; Flash memory; High frequency; Low operating current; Program disturbance

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; MICROPROCESSOR CHIPS; THERMAL EFFECTS;

EEPROM; EMBEDDED FLASH MEMORY; HIGH FREQUENCY; LOW OPERATING CURRENT; PROGRAM DISTURBANCE;

FLASH MEMORY;

EID: 18744381344     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2005.845564     Document Type: Conference Paper

References (10)

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