Investigation of temperature-dependent electrical properties of p-VOPc/n-si heterojunction under dark conditions

Ionics

Volumn 17, Issue 4, 2011, Pages 307-313

  Khan, Shahid M ^a   Sayyad, Muhammad H ^a   Karimov, Khasan S ^a,b  

^a GIK INSTITUTE OF ENGINEERING SCIENCES AND TECHNOLOGY   (Pakistan)

^b Physical Technical Institute Dushnabe   (Tajikistan)

Author keywords

Heterojunction; Organic semiconductor; Phthalocyanine; Thin film; VOPc

Indexed keywords

BARRIER HEIGHTS; DARK CONDITIONS; DARK CURRENT-VOLTAGE; EFFECT OF TEMPERATURE; ELECTRICAL PROPERTY; EXPONENTIAL TRAP DISTRIBUTION; IDEALITY FACTORS; IV CHARACTERISTICS; LOW VOLTAGES; OHMIC CONDUCTION; ORGANIC SEMICONDUCTOR; ORGANIC/INORGANIC HETEROJUNCTIONS; PHTHALOCYANINE; RECTIFICATION RATIO; ROOM TEMPERATURE; ROOM TEMPERATURE MOBILITY; SERIES AND SHUNT RESISTANCES; SPACE CHARGES; TEMPERATURE DEPENDENT; VANADYL PHTHALOCYANINE; VOPC;

ELECTRIC PROPERTIES; ELECTRIC RECTIFIERS; HETEROJUNCTIONS; NITROGEN COMPOUNDS; THIN FILMS; VANADIUM COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79955712688     PISSN: 09477047     EISSN: 18620760     Source Type: Journal    
DOI: 10.1007/s11581-010-0508-0     Document Type: Article

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