메뉴 건너뛰기




Volumn 270, Issue 1-2, 1999, Pages 148-156

Influence of dioxygen and annealing process on the transport properties of nickel phthalocyanine Schottky-barrier devices

(1)  Riad, A S a  

a 61519 *  (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODES; ELECTRON TRANSPORT PROPERTIES; GOLD; NICKEL; ORGANIC COMPOUNDS; OXYGEN;

EID: 0033212659     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00128-3     Document Type: Article
Times cited : (76)

References (31)
  • 29
    • 0003546026 scopus 로고
    • Metal-Semiconductor Contacts
    • UK: Oxford University Press, Oxford
    • Rhoderick E.H., Williams R.H. Metal-Semiconductor Contacts. 2nd Edition:1988;Oxford University Press, Oxford, UK.
    • (1988) 2nd Edition
    • Rhoderick, E.H.1    Williams, R.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.