Dominant conduction mechanism and the effects of device temperature on electrical characteristics of Al/ZnPc/n-Si structures

Vacuum

Volumn 84, Issue 7, 2010, Pages 975-979

  Hussain, A ^a   Akhter, P ^b   Bhatti, A S ^a   Shah, A A ^c   Bilal, S ^d  

^a COMSATS Institute of Information Technology ^*  (Pakistan)

^b Pakistan Council of Renewable Energy Technologies   (Pakistan)

^c ABDUL WALI KHAN UNIVERSITY   (Pakistan)

^d UNIVERSITY OF PESHAWAR   (Pakistan)

Author keywords

Electronic transport in interface structures; Ideality factor; Organic and inorganic semiconductor contact and Schottky barrier height; Series resistance; Thermionic emission

Indexed keywords

ELECTRONIC TRANSPORT IN INTERFACE STRUCTURE; IDEALITY FACTORS; INORGANIC SEMICONDUCTORS; SCHOTTKY BARRIER HEIGHTS; SERIES RESISTANCES;

ACTIVATION ENERGY; DATA HANDLING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES; THERMIONIC EMISSION; TRANSPORT PROPERTIES;

SEMICONDUCTOR JUNCTIONS;

EID: 77149120444     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.01.035     Document Type: Article

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