Electrical conductivity and the effect of temperature on photoconduction of n-ZnSe/p-Si rectifying heterojunction cells

Semiconductor Science and Technology

Volumn 11, Issue 1, 1996, Pages 96-102

  Darwish, S ^a   Riad, A S ^a   Soliman, H S ^b  

^a Minia University ^*  (Egypt)

^b Ain Shams University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; FERMI LEVEL; HETEROJUNCTIONS; PHOTOCONDUCTIVITY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; THERMAL EFFECTS; VACUUM APPLICATIONS;

DARK CURRENT; PHOTOCONDUCTION; PHOTOCURRENT; PHOTOELECTRICAL MEASUREMENT; POOLE-FRENKEL EFFECT; SCHOTTKY EMISSION; VACUUM DEPOSITION;

PHOTOVOLTAIC CELLS;

EID: 0029775706     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/1/021     Document Type: Article

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