Charge transportation and photo generation process in polythiophene functionalized with tin (II) phthalocyanine (SnPc-PT) thin film

Solar Energy Materials and Solar Cells

Volumn 92, Issue 11, 2008, Pages 1516-1525

  Roy, M S ^a   Balraju, P ^b   Deol, Y S ^a   Mishra, R K ^a   Choudhary, V S ^a   Sharma, G D ^b  

^a DEFENCE LABORATORY   (India)

^b JAI NARAIN VYAS UNIVERSITY   (India)

Author keywords

Band gap; Charge transfer; Photo generation; Rectification

Indexed keywords

ALUMINA; ALUMINUM; CHARGE DISTRIBUTION; CONCENTRATION (PROCESS); CURRENT DENSITY; DIRECT ENERGY CONVERSION; ELECTRIC RECTIFIERS; HEAT CONDUCTION; LIGHT METALS; MECHANISMS; OHMIC CONTACTS; PHOTOTRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING CADMIUM TELLURIDE; SULFUR COMPOUNDS; THERMIONIC EMISSION; THICK FILMS; TIN; TITANIUM COMPOUNDS; WORK FUNCTION;

AL ELECTRODES; BAND-GAP; CHARGE CONDUCTION; CHARGE TRANSPORTATION; CHARGE-TRANSFER; CONDUCTION MECHANISMS; DARK-CURRENT DENSITIES; DEPLETION LAYERS; DEVICE CAPACITANCE; EXPONENTIAL DISTRIBUTIONS; FORWARD BIAS; FREQUENCY RANGING; FUNCTIONALIZED; HIGH VOLTAGES; HIGH WORK FUNCTION; IMPEDANCE MEASUREMENTS; IN-BAND; INDIUM-TIN OXIDE; INTERSTITIALS; IONIZED ACCEPTORS; LOW FREQUENCIES; LOW-WORK FUNCTIONS; PHOTO GENERATION; POLY-THIOPHENE; POTENTIAL BARRIER HEIGHT; RC ELEMENTS; RECTIFICATION; RECTIFICATION BEHAVIOR; SANDWICH DEVICES; SCHOTTKY; SCHOTTKY BARRIER; SPACE CHARGES; STEADY STATES; TIN(II);

CURRENT VOLTAGE CHARACTERISTICS;

EID: 50249155322     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.06.017     Document Type: Article

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