Internally-matched GaN HEMT high efficiency power amplifier for Space Solar Power Stations

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn , Issue , 2010, Pages 119-122

  Yamanaka, K ^a   Tuyama, Y ^a   Ohtsuka, H ^a   Chaki, S ^a   Nakayama, M ^a   Hirano, Y ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

High voltage techniques; MODFET power amplifiers; Pulse measurements

Indexed keywords

GAN HEMTS; HERMETICALLY SEALED PACKAGES; HIGH EFFICIENCY POWER AMPLIFIERS; HIGH VOLTAGE TECHNIQUES; HIGH-EFFICIENCY AMPLIFIERS; INTERNAL MATCHING; MATCHING CIRCUIT; MAXIMUM POWER; MODFET POWER AMPLIFIERS; OUTPUT POWER; PULSE MEASUREMENTS; SPACE SOLAR POWER; SPACE SOLAR POWER STATIONS;

GALLIUM NITRIDE; MODFETS; POWER AMPLIFIERS; SOLAR ENERGY; SOLAR POWER PLANTS;

EFFICIENCY;

EID: 79955711795     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

1. N. Shinohara and S. Kawasaki, "Recent Wireless Power Transmission technologies in Japan for space solar power station/satellite", 2009 IEEE Radio and Wireless Symposium, pp.13-15, January 2009
2. Y. Kamo, T. Kunii, H. Takeuchi, Y. Yamamoto, M. Totsuka, S. Miyakuni, T. Oku, T. Nanjo, H. Chiba, T. Oishi, Y. Abe, Y. Tsuyama, R. Shirahana, H. Ohtsuka, K. Iyomasa, K. Yamanaka, M. Hieda, M. Nakayama, H. Matsuoka, Y. Tarai, T. Ishikawa, T. Takagi, K. Maramoto and Y. Matsuda, "C-Band 140 W AlGaN/GaN HEMT with Cat-CVD Technique", 2005 IEEE MTT-S Int. Microwave Symp. Dig. WE1E-4, June 2005
3. K. Yamanaka, K. Iyomasa, H. Ohtsuka, M. Nakayama, Y. Tsuyama, T. Kunii, Y. Kamo, T. Takagi, "S and C band over 100W GaN HEMT 1chip high power amplifiers with cell division configuration," 2005 European Gallium Arsenide and Other Semiconductor Application Symposium, pp. 241-244, October 2005.
4. A. Maekawa, T. Yamamoto, E. Mitani, and S. Sano, "A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power Application", 2006 IEEE MTT-S Int. Microwave Symp. Dig. pp. 722-725, June 2006. (Pubitemid 46924326)
5. A. Wakejima, K. Matsunaga, Y. Okamoto, Y. and, T. Nakayama, K. Kasahara, and H. Miyamoto, "280W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellar base stations", Electronics Lett., Vol. 41, No. 18 pp. 1004-1005, September 2005. (Pubitemid 41365653)
6. A. Wakejima, K. Matsunaga, Y. Okamoto, Y. and, T. Nakayama, and H. Miyamoto, "370W output power GaN-FET amplifier for W-CDMA cellar base stations", Electronics Lett., Vol. 41, No. 25 pp. 1371-1372, December 2005.
7. Y. Okamoto, A. Wakejima, Y. and, T. Nakayama, K. Matsunaga, and H. Miyamoto, "100W C-band single-chip GaN FET power amplifier", Electronics Lett., Vol. 42, No. 5 pp. 283-285, March 2006 (Pubitemid 43343383)
8. A. Maekawa, M. Nagahara, T. Yamamoto and S. Sano, "A 100W High-Efficiency GaN HEMT Amplifier for S-Band Wireless System", 2005 European Microwave Conference, pp.497-500, October 2005 (Pubitemid 46331409)
9. Y. Takada, H. sakurai, K. Matsushita, K. Masuda, S. Takatsuka, M. Kuraguchi, T. Suzuki, T. Suzuki, M. Hirose, H. Kawasaki, K. Takagi, and K. Tsuda, "C-Band AlGaN/GaN HEMTs with 170W Output Power", 2005 Int. Conference on Solid State Devices and Materials, Extended Abstracts, pp. 486-487, September 2005.
10. H. Shigematsu, Y. Inoue, A. Akasegawa, M. Yamada, S. Masuda, Y. Kamada, A. Yamada, M. Kanamura, T. Ohki, Makiyama, K. Okamoto, N. Imanishi, K. Kikkawa, K. Joshin, and N. Hara, "C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE", 2009 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1265-1268, May 2009
11. T. Yamasaki, Y. Kittaka, H. Minamide, K. Yamauchi, S. Miwa, S. Goto, M. Nakayama, M. Kono and N. Yoshida, "A 68% Efficiency, C-Band 100W GaN HEMT Amplifier for Space Applications", 2010 IEEE MTT-S Int. Microwave Symp. Dig. TH3D-1, May 2010
12. P. Wright, A. Sheikh, C. Roff, P. J. Tasker, J. Benedikt, "Highly efficient operation modes in GaN power transistors delivering upwards of 81%) efficiency and 12W output power", 2008 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1147-1150, June 2008
13. K. Kuroda, R. Ishikawa, and K. Honjo, "High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz", Proceedings of the 38th European Microwave Conference, pp. 440-443, October 2008
14. S. C. Cripps, "RF Power Amplifiers for Wireless Communications" , Artech House, 2006
15. F. H. Raab, "Class-E, Class-C, and Class-F power amplifiers based upon a finite number of harmonics", IEEE Transaction on Microwave Theory and Techniques, Vol. 49, No.8, pp. 1462-1468, August 2001 (Pubitemid 32864889)