A 68% efficiency, C-band 100W GaN power amplifier for space applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 1384-1387

  Yamasaki, T ^a   Kittaka, Y ^b   Minamide, H ^a   Yamauchi, K ^a   Miwa, S ^a   Goto, S ^a   Nakayama, M ^a   Kohno, M ^a   Yoshida, N ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Wave Technology Inc   (Japan)

Author keywords

GaN HEMT; High efficiency; High power amplifiers; High reliability; Satellite communication

Indexed keywords

GAN HEMTS; HIGH EFFICIENCY; HIGH POWER AMPLIFIERS; HIGH RELIABILITY; SATELLITE COMMUNICATION;

GALLIUM NITRIDE; POWER AMPLIFIERS; RELIABILITY; SATELLITE COMMUNICATION SYSTEMS; SPACE APPLICATIONS; TRAVELING WAVE TUBES; VACUUM TECHNOLOGY;

GALLIUM ALLOYS;

EID: 77957766983     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5517228     Document Type: Conference Paper

References (9)

1. Y. Takada, H. Sakurai, K. Matsushita, K. Masuda, S. Takatsuka, M. Kuraguchi, T. Suzuki, T. Suzuki, M. Hirose, H. Kawasaki, K. Takagi and K. Tsuda, "C-Band AIGaN/GaN HEMTs with 170W Output Power", 2005 Int. Conference on Solid State Devices and Materials, Extended Abstracts, pp. 486-487, September 2005.
2. A. Chini, D. Buttari, R. Coffie, L. Shen, S. Heikman, A. Chakraborty, S. Keller, U.K. Mishra, "Power and linearity characteristics of field-plate processed-gate AIGaN-GaN HEMTs," IEEE Electron Device Letters, pp.229-231, May 2004.
3. K. Takada, K Tsuda, R. Ishikawa, K. Honjyo and Y. Hisada" "GaN microwave power device for Space Solar Power System," IEICE Technical Report, SPS2007-03, April 2007 (in Japanease).
4. K. Krishnamurthy, J. Martin, B. Landberg, R. Vetury, and M. J. Poulton, "Wideband 400W Pulsed Power GaN HEMT Amplifiers," 2008 IEEE MTT - S int. Microwave Symp. Dig., WE1E-01, June 2008 .
5. H. Shigematsu, Y. Inoue, A. Akasegawa, M. Yamada, S. Masuda, Y. Kamada, A. Yamada, M. Kanamura, T. Ohki, K. Makiyama, N. Okamoto, K. Imanishi, T. Kikkawa, K. Joshin, and N. Hara, "C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE," 2009 IEEE MTT-S int. Microwave Symp. Dig, pp.1265-1268, June 2009.
6. K. Iyomasa, K. Yamanaka, K. Mori, H. Noto, H. Ohtsuka, M. Nakayama, T. Kunii, Y. Kamo, and Y. Isota, "GaN HEMT 60W Output Power Amplifier with Over 50% Efficiency at C-Band 15% Relative Bandwidth Using Combined Short and Open Circuited Stubs," 2007 IEEE MTT-S int. Microwave Symp. Dig., THIA-3, June 2007.
7. H. Otsuka, K. Yamanaka, H. Noto, Y. Tsuyama, S. Chaki, A. Inoue, and M. Miyazaki, "Over 57% Efficiency C-band GaN HEMT High Power Amplifier with Internal Harmonic Manipulation Circuits," 2008 IEEE MTT - S int. Microwave Symp. Dig., WE1E-03, June 2008.
8. P. Colantonio, F. Giannini, R. Giofre, E. Limit, A. Serino, M. Peroni, P. Romanini, C. Proietti, "A C-band high-efficiency second-harmonie-tuned hybrid power amplifier in GaN technology," IEEE trans. MTT-S. vo1.54, No.6, pp.2713-2722, June 2006.
9. Y. Kamo, T. Kunii, H. Takeuchi, Y. Yamamoto, M. Totsuka, T. Shiga, H. Minami, T. Kitano, S. Miyakuni, T. Oku, A. Inoue, T. Nanjo, H. Chiba, M. Suita, T. Oishi, Y. Abe, Y. Tsuyama, R. Shirahana, H. Ohtsuka, K. Iyomasa, K. Yamanaka, M. Hieda, M. Nakayama, T. Ishikawa, T. Takagi, K. Marumoto and Y. Matsuda, "A C-Band AIGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100W Operation ", 2005 IEEE MTT - S Int. Microwave Symp. Dig. WE1E-4, June 2005