C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 1265-1268

  Shigematsu, H ^a   Inoue, Y ^a   Akasegawa, A ^a   Yamada, M ^a   Masuda, S ^a   Kamada, Y ^a   Yamada, A ^a   Kanamura, M ^a   Ohki, T ^a   Makiyama, K ^a   Okamoto, N ^a   Imanishi, K ^a   Kikkawa, T ^a   Joshin, K ^a   Hara, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

C band; GaN; PAE; Power amplifiers; X band

Indexed keywords

C-BAND; CHIP CONFIGURATION; GAN POWER AMPLIFIER; HEAT DISTRIBUTION; HIGH FREQUENCY; IMPEDANCE TRANSFORMERS; INPUT AND OUTPUTS; NONUNIFORM; OUTPUT POWER; POWER-ADDED EFFICIENCY;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INSULATING MATERIALS; MICROWAVES;

POWER AMPLIFIERS;

EID: 77949990345     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165934     Document Type: Conference Paper

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