A high-linearity broadband 55 77 GHz differential low-noise amplifier with 20 dB gain in SiGe technology

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn , Issue , 2010, Pages 1501-1504

  Kissinger, Dietmar ^a   Aufinger, Klaus ^b   Meister, Thomas F ^b   Maurer, Linus ^c   Weigel, Robert ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c DICE GmbH & Co KG   (Austria)

Author keywords

Broadband amplifiers; differential amplifiers; heterojunction bipolar transistors; silicon compounds

Indexed keywords

A-CENTER; BOND PAD; CHIP AREAS; COMPRESSION POINTS; DIFFERENTIAL CURRENT; DIFFERENTIAL GAIN; FRACTIONAL BANDWIDTHS; LINEARITY MEASUREMENTS; SIGE TECHNOLOGY; SIGE:C-HBT; UNCONDITIONALLY STABLE; UPPER CORNER;

BANDWIDTH; BIPOLAR TRANSISTORS; BROADBAND AMPLIFIERS; DIFFERENTIAL AMPLIFIERS; HETEROJUNCTIONS; LOW NOISE AMPLIFIERS; SILICON ALLOYS; SILICON COMPOUNDS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 79955706266     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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