3.3 ps SiGe bipolar technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 255-258

  Bock J ^a   Schafer H ^a   Knapp, H ^a   Aufinger, K ^a   Wurzer, M ^a   Boguth, S ^a   Bottner T ^a   Stengl, R ^a   Perndl, W ^a   Meister, T F ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; EPITAXIAL GROWTH; INTEGRATED CIRCUIT LAYOUT; RADAR; TRANSMISSION ELECTRON MICROSCOPY; OSCILLATORS (ELECTRONIC); SI-GE ALLOYS;

EMITTER-BASE SPACERS; GATE DELAYS; RING OSCILLATORS (RO); STATIC FREQUENCY DIVIDER;

BIPOLAR TRANSISTORS; DELAY CIRCUITS;

A-RINGS; CIRCUIT PERFORMANCE; GATE DELAYS; INPUT FREQUENCY; MAXIMUM OSCILLATION FREQUENCY; RING OSCILLATOR; SIGE BIPOLAR TECHNOLOGY; STATE OF THE ART; STATIC FREQUENCY DIVIDERS; TRANSIT FREQUENCY;

EID: 21644443368     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. J. S. Rieh et al., "SiGe HBTs with Cut-off Frequency of 350 GHz", IEDM Technical Digest, pp. 771-774, 2002
2. B. Jagannathan et al., "3.9 ps SiGe HBT ECL Ring Oscillator and Transistor Design for Minimum Gate Delay", IEEE Electron Device Letters, Vol. 24, No. 5, pp. 324-326, 2003
3. max of 300 GHz", RF IC Symposium, pp. 395-398, 2004
4. T. F. Meister et al., "SiGe Bipolar Technology with 3.9 ps Gate Delay", Proceedings of the BCTM, pp. 103-106, 2003
5. H. Rücker et al., Delay", IEDM Technical Digest, pp. 121-124, 2003
6. J. Böck et al., Applications", accepted for Proceedings of the BCTM, 2004
7. H. Knapp et al., Dividers in SiGe Bipolar Technology", Symposium, pp. 1067-1070, 2003