Dielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin films

Applied Surface Science

Volumn 257, Issue 16, 2011, Pages 7245-7253

  Mageshwari, K ^a   Sathyamoorthy, R ^a   Sudhagar, P ^b   Kang, Yong Soo ^b  

^a KONGUNADU ARTS AND SCIENCE COLLEGE   (India)

^b Hanyang University   (South Korea)

Author keywords

Bismuth sulfide; Dielectric property; Relaxation property; Semiconductor; Thin film

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FILM PREPARATION; LAYERED SEMICONDUCTORS; PARTICLE SIZE; SEMICONDUCTOR MATERIALS; SUBSTRATES; SULFUR COMPOUNDS; THERMAL EVAPORATION; X RAY DIFFRACTION;

ANGULAR FREQUENCIES; BISMUTH SULFIDE; CONDUCTION MECHANISM; CORRELATED BARRIER HOPPING MODELS; ELECTRON TRANSPORT; ORTHORHOMBIC STRUCTURES; QUANTUM CONFINEMENT EFFECTS; RELAXATION PROPERTY;

THIN FILMS;

EID: 79955640754     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.03.100     Document Type: Article

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