Nanocrystalline CdSe thin films of different morphologies in thermal evaporation process

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 12, 2008, Pages 6474-6480

  Pal, U ^a   Zaldivar, M Herrera ^b   Sathyamoorthy, R ^c   Manjuladevi, V ^c   Sudhagar, P ^c   Chandra Mohan, S ^c   Senthllarasu, S ^c  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^c KONGUNADU ARTS AND SCIENCE COLLEGE   (India)

Author keywords

CdSe thin films; Morphology; Nanocrystalline; Optical properties

Indexed keywords

CADMIUM COMPOUNDS; ENERGY GAP; FILM PREPARATION; FILM THICKNESS; GLASS; II-VI SEMICONDUCTORS; MORPHOLOGY; NANOCRYSTALS; OPTICAL PROPERTIES; SELENIUM COMPOUNDS; SUBSTRATES; THERMAL EVAPORATION;

CDSE THIN FILMS; INTERCONNECTED PARTICLES; MORPHOLOGICAL VARIATION; NANOCRYSTALLINE THIN FILMS; NANOCRYSTALLINES; QUANTUM CONFINEMENT EFFECTS; SPHERICAL MORPHOLOGIES; THERMAL EVAPORATION PROCESS;

THIN FILMS;

EID: 58149296365     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (26)

1. J. M. Heath, Acc. Chem. Res. 32, 389 (1999).
2. A. P. Alivisatos, Science 271, 933 (1996).
3. C. M. Lieber, Solid St. Commun. 107, 607 (1998).
4. R. E. Smalley and B. I. Yakobson, Solid St. Commun. 107, 597 (1998).
5. V. L. Colvin, M. C. Schlamp, and A. P. Alivisatos, Nature 370, 354 (1994).
6. W. C. W. Chen and S. Nie, Science 281, 2016 (1998).
7. G. P. Mitchell, C. A. Mirkin, and R. L. Letsinger, J. Am. Chem. Soc. 121, 8122 (1999).
8. X. Peng, L. Manna. W. Yang, J. Wickham, E. Scher, A. Kadavanich, and A. P. Alivisatos, Nature 404, 59 (2000).
9. M. Dahan, T. Laurence, F. Pinaud, D. S, Chemla, A. P. Alivisatos, M. Sauer, and S. Weiss, Opt. Lett. 26, 825 (2001).
10. D. Gerion, F. Pinaud, S. C. Williams, W. J. Parak, D. Zanchet, S. Weiss, and A. P. Alivisatos, J. Phys. Chem. B 105, 8861 (2001).
11. B. P. Zhang, T. Yasuda, Y. Segawa, H. Yaguchi, K. Onabe, E. Edamatsu, and T. Itoh, Appl. Phys. Lett. 70, 2413 (1997).
12. M. C. Liao, Y. H. Chang, Y. F. Chen, J. W. Hsu, J. M. Lin, and W. C. Chou, Appl. Phys. Lett. 70. 2256 (1997).
13. E. D. Bourret-Courchense. Appl. Phys. Lett. 68, 2418 (1996).
14. H. Saloniemi, T. Kanniainen, M. Riatala, M. Leskela, and R. Lappalainen, J. Mater. Chem. 8, 651 (1998).
15. Y. D. Li. Y. Ding, Y. T. Qian, Y. Zhang, and L. Yang. Inorg. Chem. 37, 2844 (1998).
16. C. Wang, W. X. Zhang, Y. Ding, Y. T. Qian. Y. Li, and G. E. Zhou, Chem. Mater. 10, 2301 (1998).
17. C. N. R. Rao, A. Govindaraj, F. Leonard Deepak, and N. A. Gunari, Appl. Phys. Lett. 78, 1853 (2001).
18. R. Sathyamoorthy, V. Manjuladevi, P. Sudhagar. S. Senthilarasu, and U. Pal, Mater. Chem. Phys. 105, 20 (2007).
19. M. Skyllas and K. B. Miller, J. Electrochem. Soc: 127, 8569 (1980).
20. M. Cardona, K. L. Shaklee. and F. H. Pollak, Phys. Rev. 154, 696 (1967).
21. U. Pal, D. Samanta, S. Ghorai, and A. K. Chaudhuri, J. Appl. Phys. 74, 6368 (1993).
22. M. Normal. D. J. Norris, M. Kuno, and M. G. Bawendi, Phys. Rev. Lett. 75, 3728 (1995).
23. M. S. Shaalan and R. Müller. Sol. Cells 28, 185 (1990).
24. C. B. Murray, D. J. Norris, and M. G. Bawendi, J. Am. Chem. Soc. 115, 8706 (1993).
25. R. B. Kale, S. D. Sartale, B. K. Chougule, and C. D. Lokhunde, Semicond. Sci. Technol. 19, 980 (2004).
26. R. B. Kale and C. D. Lokhande, Semicond. Sci. Technol. 20. 1 (2005).