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Volumn 13, Issue 9, 2009, Pages 1339-1350
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Study of the optimal condition for electroplating of Bi 2S 3 thin films and their photoelectrochemical characteristics
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Author keywords
Electrochemical deposition; Electrochemical impedance spectroscopy; Nanocrystalline Bi 2S 3 thin films; Photoelectrochemical cell; TG DTA
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Indexed keywords
BAND GAP ENERGY;
BISMUTH SULFIDE;
CHEMICAL COMPOSITIONS;
COMPLEXING AGENTS;
DONOR DENSITY;
ELECTROCHEMICAL DEPOSITION;
ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY MEASUREMENTS;
ENERGY DISPERSIVE ANALYSIS OF X-RAYS;
FILM MATRIX;
FOUR-PROBE MEASUREMENT;
MOTT-SCHOTTKY PLOTS;
NANOCRYSTALLINE BI 2S 3 THIN FILMS;
NON-AQUEOUS;
NYQUIST;
OPTIMAL CONDITIONS;
PHOTOACTIVITY;
PHOTOELECTROCHEMICAL APPLICATIONS;
PHOTOELECTROCHEMICAL CHARACTERISTICS;
PRECURSOR SALTS;
ROOM TEMPERATURE;
SCANNING ELECTRONS;
SEMI-CONDUCTING PROPERTY;
TG-DTA;
THERMOGRAVIMETRY;
TRIETHANOL;
TRITON-X;
UV-VIS SPECTROSCOPY;
AMINES;
BISMUTH;
DIMETHYL SULFOXIDE;
ELECTROCHEMICAL CORROSION;
ELECTROCHEMICAL PROPERTIES;
ELECTRODEPOSITION;
METAL ANALYSIS;
NANOCRYSTALLINE MATERIALS;
PHOTOELECTROCHEMICAL CELLS;
REDUCTION;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING FILMS;
SOLAR ENERGY;
SPECTRUM ANALYSIS;
SURFACE ACTIVE AGENTS;
SURFACE TENSION;
THERMOANALYSIS;
THIN FILMS;
THIOUREAS;
TRANSMISSION ELECTRON MICROSCOPY;
ULTRAVIOLET SPECTROSCOPY;
UREA;
X RAY DIFFRACTION ANALYSIS;
ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY;
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EID: 67649891828
PISSN: 14328488
EISSN: None
Source Type: Journal
DOI: 10.1007/s10008-008-0679-z Document Type: Article |
Times cited : (37)
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References (30)
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