A novel column-decoupled 8T cell for low-power differential and domino-based SRAM design

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 19, Issue 5, 2011, Pages 869-882

  Joshi, Rajiv V ^a   Kanj, Rouwaida ^b   Ramadurai, Vinod ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM AUSTIN RESEARCH LABORATORY   (United States)

^c IBM   (United States)

Author keywords

Column decoupled; differential domino read; half select; low power 8T; SRAM; stability

Indexed keywords

COLUMN-DECOUPLED; DIFFERENTIAL/DOMINO READ; HALF-SELECT; LOW POWER; SRAM;

CAPACITANCE; CELLS; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; LOGIC DESIGN; MONTE CARLO METHODS; STABILITY; STATIC RANDOM ACCESS STORAGE; TECHNOLOGY;

CYTOLOGY;

EID: 79955565368     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2010.2042086     Document Type: Article

References (13)

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