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Volumn , Issue , 2007, Pages 8-13

A floating-body dynamic supply boosting technique for low-voltage sram in nanoscale PD/SOI CMOS technologies

Author keywords

Booster circuit; Low power; SRAM; Yield

Indexed keywords

BOOSTER CIRCUIT; DYNAMIC SUPPLY; LOW POWER;

EID: 36949009622     PISSN: 15334678     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1283780.1283784     Document Type: Conference Paper
Times cited : (2)

References (10)
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    • Y. Nakagamoe et al., "Review and Future Prospects of low Voltage RAM Circuits", IBM Journal of R&D, Vol 47, No. 5/6, 2003, pp. 525-552.
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    • Nakagamoe, Y.1
  • 2
    • 17644374580 scopus 로고    scopus 로고
    • Variability Analysis for Sub-100 nm PD/SOI CMOS SRAM cell
    • R. V. Joshi et al., "Variability Analysis for Sub-100 nm PD/SOI CMOS SRAM cell", Proc. of the 30th ESSCC, 2004, pp. 211-214.
    • (2004) Proc. of the 30th ESSCC , pp. 211-214
    • Joshi, R.V.1
  • 3
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    • R. Joshi et al. Statistical Exploration of the Dual Supply Voltage Space of a 65nm PD/SOI CMOS SRAM Cell, ESSCIRC 2006.
    • R. Joshi et al. "Statistical Exploration of the Dual Supply Voltage Space of a 65nm PD/SOI CMOS SRAM Cell", ESSCIRC 2006.
  • 6
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    • 90nm Process Variation Adaptive Embedded SRAM Modules with Power-Line-Floating Write Technique
    • Match
    • M. Yamaoka et al., "90nm Process Variation Adaptive Embedded SRAM Modules with Power-Line-Floating Write Technique", IEEE JSSC, Match 2006.
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    • Yamaoka, M.1
  • 7
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    • Low Power SRAM design Using Charge sharing Technique
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    • Ming, G.1
  • 8
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    • W. Henkels et al. Us Patent No. 6279144, Aug 21, 2001.
    • W. Henkels et al. Us Patent No. 6279144, Aug 21, 2001.
  • 9
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    • Stable Cell Design for the 32nm Node and Beyond
    • L. Chang et al., "Stable Cell Design for the 32nm Node and Beyond", IEEE Symposium on VLSI Technology, 2005.
    • (2005) IEEE Symposium on VLSI Technology
    • Chang, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.