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Applied Physics Letters

Volumn 93, Issue 22, 2008, Pages

GaN nanostructured p-i-n photodiodes

(5) Pau, J L a Bayram, C a Giedraitis, P a McClintock, R a Razeghi, M a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISTILLATION; GALLIUM ALLOYS; PHOTODIODES; SEMICONDUCTING GALLIUM;

COLLECTION EFFICIENCIES; GAN DIODES; IDEALITY FACTORS; NANO PILLARS; NANOSTRUCTURED; NANOSTRUCTURED DEVICES; RECTIFYING BEHAVIORS; REVERSE CURRENTS; SIDE-WALLS; SURFACE STATES;

GALLIUM NITRIDE;

EID: 57349175707 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3041641 Document Type: Article

Times cited : (9)

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