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Angewandte Chemie - International Edition

Volumn 50, Issue 19, 2011, Pages 4414-4418

Nitronyl nitroxide radicals as organic memory elements with both n- and p-type properties

(8) Lee, Junghyun a Lee, Eunkyo a Kim, Sangkwan a Bang, Gyeong Sook a Shultz, David A b Schmidt, Robert D b,c Forbes, Malcolm D E c Lee, Hyoyoung a

a Sungkyunkwan University (South Korea)

b NORTH CAROLINA STATE UNIVERSITY (United States)

c University of North Carolina at Chapel Hill (United States)

Author keywords

electron paramagnetic resonance; memory devices; molecular electronics; nitrogen radicals; organic radicals

Indexed keywords

ELECTROCHEMICAL ELECTRON; ELECTRON PARAMAGNETIC RESONANCE; MEMORY DEVICE; NITROGEN RADICALS; NITRONYL NITROXIDES; ORGANIC MEMORIES; ORGANIC RADICALS; P-TYPE; REDOX-ACTIVE; REDUCED-STATE; SWITCHABILITY;

ELECTRON RESONANCE; MOLECULAR ELECTRONICS; PARAMAGNETIC MATERIALS; PARAMAGNETISM;

PARAMAGNETIC RESONANCE;

EID: 79955508865 PISSN: 14337851 EISSN: 15213773 Source Type: Journal
DOI: 10.1002/anie.201004899 Document Type: Article

Times cited : (106)

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