Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 154-156

  Song, Y ^a   Ling, Q D ^a   Zhu, C ^a   Kang, E T ^a   Chan, D S H ^a   Wang, Y H ^b   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Electrical bistability; Memory effect; Polymer; Thin film device

Indexed keywords

CHELATION; DATA STORAGE EQUIPMENT; ELECTRIC POTENTIAL; EUROPIUM COMPOUNDS; ORGANIC POLYMERS; SANDWICH STRUCTURES; SEMICONDUCTOR DEVICE MANUFACTURE;

CHELATED EUROPIUM COMPLEX; CONJUGATED COPOLYMER; ELECTRICAL BISTABILITY; FLUORENE; MEMORY EFFECT;

THIN FILM DEVICES;

EID: 33644616678     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.864172     Document Type: Article

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