A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers

Polymers for Advanced Technologies

Volumn 19, Issue 4, 2008, Pages 281-284

  Yonekuta, Yasunori ^a   Honda, Kenji ^a   Nishide, Hiroyuki ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

I V characteristics; Nitroxide radical; Polymer memory; Radical polymer

Indexed keywords

ELECTRIC CONDUCTIVITY; FREE RADICAL POLYMERIZATION; POLYMETHYL METHACRYLATES;

NITROXIDE RADICAL; POLYMER MEMORY;

DATA STORAGE EQUIPMENT;

DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; FREE RADICAL POLYMERIZATION; POLYMETHYL METHACRYLATES;

DISPERSANT; DISPERSION; ELECTRICAL CONDUCTIVITY; POLYMETHYL METHACRYLATE; SILVER;

EID: 42149095076     PISSN: 10427147     EISSN: 10991581     Source Type: Journal    
DOI: 10.1002/pat.1006     Document Type: Article

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