SCOPUS 정보 검색 플랫폼

Volumn 49, Issue 5, 2011, Pages 527-536

Influence of post-deposition annealing on the structural, optical and electrical properties of Li and Mg co-doped ZnO thin films deposited by sol-gel technique

(5) Ravichandran, C a,b Srinivasan, G c Lennon, Craig d Sivananthan, S d Kumar, J a

a ANNA UNIVERSITY (India)

b Dhanalakshmi College of Engineering (India)

c Muthurangam Government Arts College (Autonomous) (India)

d UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

Author keywords

Photoluminescence; Sol gel method; Thin film; X ray photoelectron spectroscopy; Zinc oxide

Indexed keywords

ABSORPTION EDGES; ANNEALING PROCESS; ANNEALING TEMPERATURES; CHEMICAL STATE; CO-DOPED; CO-DOPED ZNO; DEEP LEVEL EMISSION; DEPOSITED FILMS; ELECTRONIC DEFECTS; GLASS SUBSTRATES; HALL MEASUREMENTS; HEXAGONAL WURTZITE STRUCTURE; INTERSTITIAL OXYGEN; ION BEAM ANALYSIS; NEAR BAND EDGE EMISSIONS; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BAND GAP ENERGY; P-TYPE; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; POLYCRYSTALLINE; POST DEPOSITION ANNEALING; ROOM TEMPERATURE; RUTHERFORD BACK-SCATTERING; SOL-GEL METHOD; SOL-GEL METHODS; SOL-GEL TECHNIQUE; ULTRAVIOLET-VISIBLE ABSORPTION SPECTRUM; VISIBLE EMISSIONS; VISIBLE RANGE; XPS; XPS SPECTRA; XRD PATTERNS; ZINC VACANCY; ZNO;

ABSORPTION; ABSORPTION SPECTROSCOPY; ANNEALING; DEPOSITION; DOPING (ADDITIVES); ELECTRON ENERGY LOSS SPECTROSCOPY; GELS; LITHIUM; MAGNESIUM; OXYGEN; PHOTOELECTRICITY; PHOTOLUMINESCENCE; PHOTONS; SOL-GEL PROCESS; SOL-GELS; SOLS; SPECTRUM ANALYSIS; SUBSTRATES; THIN FILMS; VACANCIES; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS; ZINC; ZINC COATINGS; ZINC OXIDE; ZINC SULFIDE;

OXIDE FILMS;

EID: 79955484753 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2011.03.005 Document Type: Article

Times cited : (43)

References (24)

1
- 0030913555
- Robert F. Service Science 276 1997 895 896
- (1997) Science , vol.276 , pp. 895-896
- Service, R.F.¹

2
- 0000397042
- T. Makino, C.H. Chia, N.T. Tuan, H.D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma Appl. Phys. Lett. 77 2000 975 977
- (2000) Appl. Phys. Lett. , vol.77 , pp. 975-977
- Makino, T.¹ Chia, C.H.² Tuan, N.T.³ Sun, H.D.⁴ Segawa, Y.⁵ Kawasaki, M.⁶ Ohtomo, A.⁷ Tamura, K.⁸ Koinuma, H.⁹

3
- 0000443837
- A. Ohtomo, K. Tamura, M. Kawasaki, T. Makino, Y. Segawa, Z.K. Tang, G.K.L. Wong, Y. Matsumoto, and H. Koinuma Appl. Phys. Lett. 77 2000 2204 2206
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2204-2206
- Ohtomo, A.¹ Tamura, K.² Kawasaki, M.³ Makino, T.⁴ Segawa, Y.⁵ Tang, Z.K.⁶ Wong, G.K.L.⁷ Matsumoto, Y.⁸ Koinuma, H.⁹

4
- 79957929680
- S. Choonpun, R.D. Vispute, W. Yang, R.P. Sharma, and T. Venkatesan Appl. Phys. Lett. 80 2002 1529 1531
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1529-1531
- Choonpun, S.¹ Vispute, R.D.² Yang, W.³ Sharma, R.P.⁴ Venkatesan, T.⁵

5
- 0000939615
- A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakura, Y. Yoshida, T. Yasuda, and Y. Segawa Appl. Phys. Lett. 72 1998 2466 2468
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2466-2468
- Ohtomo, A.¹ Kawasaki, M.² Koida, T.³ Masubuchi, K.⁴ Koinuma, H.⁵ Sakura, Y.⁶ Yoshida, Y.⁷ Yasuda, T.⁸ Segawa, Y.⁹

6
- 0010059052
- S.B. Zhang, S.H. Wei, and A. Zunger Phys. Rev. B 63 2001 075205 (1-7)
- (2001) Phys. Rev. B , vol.63 , pp. 075205
- Zhang, S.B.¹ Wei, S.H.² Zunger, A.³

7
- 11044222901
- D.C. Look, G.M. Renlund, R.H. Burgener, and J.R. Sizelove Appl. Phys. Lett. 85 2004 5269 5271
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5269-5271
- Look, D.C.¹ Renlund, G.M.² Burgener, R.H.³ Sizelove, J.R.⁴

8
- 0042842376
- K.K. Kim, H.S. Kim, D.K. Hwang, J.H. Lim, and S.J. Park Appl. Phys. Lett. 83 2003 63 65
- (2003) Appl. Phys. Lett. , vol.83 , pp. 63-65
- Kim, K.K.¹ Kim, H.S.² Hwang, D.K.³ Lim, J.H.⁴ Park, S.J.⁵

9
- 1842527416
- W.Z. Xu, Z.Z. Ye, T. Zhou, B.H. Zhao, L.P. Zhu, and J.Y. Huang J. Crystal Growth 265 2004 133 136
- (2004) J. Crystal Growth , vol.265 , pp. 133-136
- Xu, W.Z.¹ Ye, Z.Z.² Zhou, T.³ Zhao, B.H.⁴ Zhu, L.P.⁵ Huang, J.Y.⁶

10
- 32444436988
- Y.J. Zeng, Z.Z. Ye, W.Z. Xu, D.Y. Li, J.G. Lu, L.P. Zhu, and B.H. Zhao Appl. Phys. Lett. 88 2006 062107 (1-3)
- (2006) Appl. Phys. Lett. , vol.88 , pp. 062107
- Zeng, Y.J.¹ Ye, Z.Z.² Xu, W.Z.³ Li, D.Y.⁴ Lu, J.G.⁵ Zhu, L.P.⁶ Zhao, B.H.⁷

11
- 8644222175
- J.G. Lu, Z.Z. Ye, F. Zhuge, Y.J. Zeng, B.H. Zhao, and L.P. Zhu Appl. Phys. Lett. 85 2004 3134 3135
- (2004) Appl. Phys. Lett. , vol.85 , pp. 3134-3135
- Lu, J.G.¹ Ye, Z.Z.² Zhuge, F.³ Zeng, Y.J.⁴ Zhao, B.H.⁵ Zhu, L.P.⁶

12
- 0037671310
- T. Ohshima, T. Ikegami, K. Ebihara, and J. Asmussen Thin Solid Films 435 2003 49 55
- (2003) Thin Solid Films , vol.435 , pp. 49-55
- Ohshima, T.¹ Ikegami, T.² Ebihara, K.³ Asmussen, J.⁴

13
- 29144526720
- L.L. Chen, J.G. Lu, Z.Z. Ye, Y.M. Lin, and L.P. Zhu Appl. Phys. Lett. 87 2005 252106 (1-3)
- (2005) Appl. Phys. Lett. , vol.87 , pp. 252106
- Chen, L.L.¹ Lu, J.G.² Ye, Z.Z.³ Lin, Y.M.⁴ Zhu, L.P.⁵

14
- 77953321173
- C. Ravichandran, G. Srinivasan, Craig Lennon, S. Sivananthan, and J. Kumar Mater. Sci. Semicond. Process. 13 2010 46 50
- (2010) Mater. Sci. Semicond. Process. , vol.13 , pp. 46-50
- Ravichandran, C.¹ Srinivasan, G.² Lennon, C.³ Sivananthan, S.⁴ Kumar, J.⁵

15
- 28744452665
- M.G. Wardle, J.P. Goss, and P.R. Briddon Phys. Rev. B 71 2005 155205 (1-10)
- (2005) Phys. Rev. B , vol.71 , pp. 155205
- Wardle, M.G.¹ Goss, J.P.² Briddon, P.R.³

16
- 3242720421
- Th. Gruber, C.C. Kirchner, R. Kling, F. Reuss, and A. Waag Appl. Phys. Lett. 84 2004 5359 5361
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5359-5361
- Gruber, T.¹ Kirchner, C.C.² Kling, R.³ Reuss, F.⁴ Waag, A.⁵

17
- 0035794395
- T. Makino, N.T. Tuan, H.D. Sun, C.H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita, and H. Koinuma Appl. Phys. Lett. 78 2001 1979 1981
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1979-1981
- Makino, T.¹ Tuan, N.T.² Sun, H.D.³ Chia, C.H.⁴ Segawa, Y.⁵ Kawasaki, M.⁶ Ohtomo, A.⁷ Tamura, K.⁸ Suemoto, T.⁹ Akiyama, H.¹⁰ Baba, M.¹¹ Saito, S.¹² Tomita, T.¹³ Koinuma, H.¹⁴

18
- 0035899562
- F. Shinobu, S. Chikako, and K. Toshio Appl. Surf. Sci. 180 2001 341 350
- (2001) Appl. Surf. Sci. , vol.180 , pp. 341-350
- Shinobu, F.¹ Chikako, S.² Toshio, K.³

19
- 0027593101
- N. Fujimura, T. Nishihara, S. Goto, J. Xu, and T. Ito J. Crystal Growth 139 1993 269 279
- (1993) J. Crystal Growth , vol.139 , pp. 269-279
- Fujimura, N.¹ Nishihara, T.² Goto, S.³ Xu, J.⁴ Ito, T.⁵

20
- 0042658274
- X.S. Wang, Z.C. Wu, J.F. Webb, and Z.G. Liu Appl. Phys. A 77 2003 561 565
- (2003) Appl. Phys. A , vol.77 , pp. 561-565
- Wang, X.S.¹ Wu, Z.C.² Webb, J.F.³ Liu, Z.G.⁴

21
- 0032093740
- D.C. Reynolds, D.C. Look, B. Jogai, J.E. Van Nostrand, R. Jones, and J. Jenny Solid State Commun. 106 1998 701 704
- (1998) Solid State Commun. , vol.106 , pp. 701-704
- Reynolds, D.C.¹ Look, D.C.² Jogai, B.³ Van Nostrand, J.E.⁴ Jones, R.⁵ Jenny, J.⁶

22
- 0000559739
- Y.C. Kong, D.P. Yu, B. Zhang, W. Fang, and S.Q. Feng Appl. Phys. Lett. 78 2001 407 409
- (2001) Appl. Phys. Lett. , vol.78 , pp. 407-409
- Kong, Y.C.¹ Yu, D.P.² Zhang, B.³ Fang, W.⁴ Feng, S.Q.⁵

23
- 1142292373
- H.S. Kang, J.S. Kang, J.W. Kim, and S.Y. Lee J. Appl. Phys. 95 2004 1246 1250
- (2004) J. Appl. Phys. , vol.95 , pp. 1246-1250
- Kang, H.S.¹ Kang, J.S.² Kim, J.W.³ Lee, S.Y.⁴

24
- 0000574170
- Y.F. Lu, H.Q. Ni, Z.H. Mai, and Z.M. Ren J. Appl. Phys. 88 2000 498 502
- (2000) J. Appl. Phys. , vol.88 , pp. 498-502
- Lu, Y.F.¹ Ni, H.Q.² Mai, Z.H.³ Ren, Z.M.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.