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Materials Science and Engineering B

Volumn 55 B55, Issue 1-2, 1998, Pages 53-67

Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates

(5) Hudait, M K a,b Modak, P b Hardikar, S b Rao, K S R K a Krupanidhi, S B a

a INDIAN INSTITUTE OF SCIENCE (India)

b BHARAT ELECTRONICS LIMITED (India)

Author keywords

Gallium arsenide; Germanium; Optical properties; Solar cell

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

SEMICONDUCTING SUBSTRATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0002803340 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/s0921-5107(98)00174-3 Document Type: Article

Times cited : (16)

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