Local bonding geometry of oxygen implanted in gan: A depth-dependent study

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 9, 2010, Pages 6260-6265

  Katsikini, M ^a   Boscherini, F ^b,c   Paloura, E C ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c LABORATORIO TASC   (Italy)

Author keywords

Amorphous; FEFF simulations; Gallium oxynitride; GaN; Implantation; NEXAFS; Oxygen; X ray Absorption

Indexed keywords

AMORPHOUS; FEFF SIMULATIONS; GALLIUM OXYNITRIDE; GAN; IMPLANTATION; NEXAFS;

ABSORPTION; ATOMS; COMPUTER SIMULATION; GALLIUM NITRIDE; MULTIPHOTON PROCESSES; NORMAL DISTRIBUTION; OXYGEN; X RAY ABSORPTION; X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; X RAYS;

ABSORPTION SPECTROSCOPY;

EID: 79955431662     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2611     Document Type: Conference Paper

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