Optical characteristics of pulsed laser deposited Ge-Sb-Te thin films studied by spectroscopic ellipsometry

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Nemec P ^a   Prikryl J ^a   Nazabal, V ^b   Frumar, M ^a  

^a UNIVERSITY OF PARDUBICE   (Czech Republic)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS THIN FILMS; CHEMICAL COMPOSITIONS; ELLIPSOMETRIC DATA; ENERGY DISPERSIVE X-RAY; GE-SB-TE; LORENTZ MODEL; OPTICAL CHARACTERISTICS; OPTICAL FUNCTION; OPTICAL REFLECTIVITY; PULSED-LASER DEPOSITION TECHNIQUE; RESISTANCE TEMPERATURE; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

AMORPHOUS FILMS; ANTIMONY; ELECTRIC RESISTANCE; GERMANIUM; PULSED LASER DEPOSITION; PULSED LASERS; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

OPTICAL FILMS;

EID: 79955369081     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3569865     Document Type: Conference Paper

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